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AOD4186 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD4186 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for low voltage inverter applications.
Features
VDS (V) =40V ID = 50A RDS(ON) < 15m RDS(ON) < 19m (VGS = 10V) (VGS = 10V) (VGS = 4.5V)
- RoHS Compliant - Halogen Free
100% UIS Tested! 100% R g Tested!
Top View D
TO-252 D-PAK
Bottom View
D
S G S
G
G S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Continuous Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25C Power Dissipation
B
Maximum 40 20 35 27 70 10 8 24 29 50 25 2.5 1.6 -55 to 175
Units V V A
TC=25C TC=100C TA=25C TA=70C
ID IDM IDSM IAR EAR PD PDSM TJ, TSTG
Pulsed Drain Current C
A A mJ W W C
TC=100C TA=25C TA=70C
Power Dissipation A
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case
Symbol t 10s Steady-State Steady-State RJA RJC
Typ 16.7 40 2.5
Max 25 50 3
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4186
Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=40V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=15A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 780 VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 90 48 1.9 13.5 VGS=10V, VDS=20V, ID=20A 7 2 2.7 VGS=10V, VDS=20V, RL=1.0, RGEN=3 IF=20A, dI/dt=500A/s 9 24 TJ=125C 1.7 100 12.4 20 14.5 60 0.75 1 60 980 130 80 3.8 17 9 2.5 4.5 6 12 26 7 12 31 15 38 1200 170 110 5.7 20 11 3 6.3 15 24 19 2.2 Min 40 1 5 100 2.7 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s
A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with T =25C. The Power A dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. Ratings are based on low frequency and duty cycles to keep initial T J =25C. D. The RJA is the sum of the thermal impedence from junction to case R and case to ambient. JC E. The static characteristics in Figures 1 to 6 are obtained using <300 pulses, duty cycle 0.5% max. s F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. A Rev 0 : Oct-08 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4186
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80 10V 60 4.5V 4V ID (A) ID(A) 40 40 125C 20 VGS=3.5V 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 20 18 RDS(ON) (m) 16 14 12 10 8 0 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 5 10 VGS=10V VGS=4.5V Normalized On-Resistance 2 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 200 Temperature (C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) VGS=10V ID=20A 0 0 1 2 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 20 25C 6V 60 80 VDS=5V
17 5 2 10 VGS=4.5V
ID=15A
40 ID=20A 35 30 25 20 15 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 25C 125C IS (A)
1.0E+02 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 125C 25C
40
Alpha & Omega Semiconductor, Ltd.
RDS(ON) (m)
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AOD4186
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 VDS=20V ID=20A Capacitance (pF) 1500
8
1200
Ciss
VGS (Volts)
6
900
4
600 Coss 300 Crss 0 20 30 VDS (Volts) Figure 8: Capacitance Characteristics 10 40
2
0 0 10 15 Qg (nC) Figure 7: Gate-Charge Characteristics 5 20
0
100.0
200
10s
10.0
RDS(ON) limited
10s Power (W)
160 120 80 40 0 0.0001
ID (Amps)
100s DC
1.0
17 TJ(Max)=175C TC=25C 5 2 10
1ms 10ms
TJ(Max)=175C TC=25C
0.1 0.01
0.1
1 VDS (Volts)
10
100
0.001
0.01
0.1
1
Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=3C/W 1
Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
0
10
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1 Single Pulse
PD Ton
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4186
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50 IAR(A) Peak Avalanche Current 40 TA=150C TA=100C TA=25C 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note F)
30 20
10 0 0.000001
TA=125C
0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C)
60 50 Current rating ID(A)
Power Dissipation (W)
10000
TA=25C
1000
Power (W) 40 30 20
100
17 5 2 10
10
10 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note F)
1 0.00001
0.001
0.1
10
0
1000
Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 RJA=50C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1 Single Pulse 0.01
PD Ton
T 100 1000
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4186
Gate Charge Test Circuit & W aveform
Vgs Qg
+
VDC
10V
VDC
DUT Vgs Ig
+ Vds -
Qgs
Qgd
Charge
Resistive Switching Test Circuit & Waveforms
RL Vds Vds
Vgs Rg
DUT
VDC
+ Vdd Vgs
t d(on) t on tr t d(off) t off tf
90%
10%
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L Vds Id Vgs Rg DUT Vgs Vgs Vgs Vds E AR= 1/2 LIAR
2
BVDSS
VDC
+ Vdd Id
I AR
Diode Recovery Test Circuit & Waveforms
Vds + DUT Vgs
t rr
Q rr = - Idt
Vds Isd Vgs Ig
L
Isd
IF
dI/dt I RM Vdd
VDC
+ Vdd Vds
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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